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| Three Phase Rectifier Bridge Preliminary Data Sheet VRSM VDSM (V) 800 1200 1400 1600 1800 VRRM VDRM (V) 800 1200 1400 1600 1800 Type PSD 83 IdAV VRRM = 100 A = 800-1800V PSD PSD PSD PSD PSD 83/08 83/12 83/14 83/16 83/18 Symbol IdAVM IFSM Test Conditions TC = 100 C, TVJ = 45 C VR = 0 TVJ = TVJM VR = 0 TVJ = 45 C VR = 0 TVJ = TVJM VR = 0 (per module) Maximum Ratings 100 1200 1300 1000 1100 7200 7020 5000 5020 A A A A A As As As As C C C V V Nm Nm g Features t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine i dt 2 * * * * * * Package with screw terminals Isolation voltage 3000 V Planar glass passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 148688 Applications TVJ TVJM Tstg VISOL Md -40... + 150 150 -40... + 150 50/60 Hz, RMS t = 1 min IISOL 1 mA Mounting torque t=1s (M5) 2500 3000 5 5 160 * * * * Supplies for DC power equipment Input rectifier for PWM inverter Battery DC power supplies Field supply for DC motors Advantages Weight Terminal connection torque (M5) typ. * * * Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Symbol IR VF VTO rT RthJC RthJK ds dA a Test Conditions VR = VRRM, TVJ = 25C VR = VRRM, TVJ = TVJM IF = 100 A, TVJ = 25 C For power-loss calculations only per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration Characteristic Value 0.3 5 1.35 0.8 5 0.58 0.097 0.825 0.138 10.0 9.4 50 mA mA V V m K/W K/W K/W K/W mm mm m/s Package style and outline Dimensions in mm (1mm = 0.0394") Data according to IEC 60747 refer to a single diode unless otherwise stated 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 200 IF(OV) -----IFSM IFSM (A) TVJ=45C TVJ=150C 550 500 150 1.6 1.4 1.2 100 1 0 VRRM 50 0.8 T = 150C vj 0.5 1.0 1/2 VRRM T = 25C vj 1.5 2.0 VF (V) 0.6 0.4 0 10 1 VRRM 0 1 2 10 t[ms] 10 3 10 Forward current versus voltage drop per diode Surge overload current per diode IFSM: Crest value t: duration 1 Z thJK [A] 120 100 IdAV DC sin.180 rec.120 rec.60 rec.30 K/W 0.8 0.6 Z thJC 80 60 40 0.4 0.2 20 0 Z th 50 100 150 TC(C) 200 0.01 0.1 t[s] 1 10 Maximum forward current at case temperature Transient thermal impedance per diode POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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